Wafer Analyzer RAMANdrive

Analyze the whole wafer by Raman Imaging

Highly sensitive, ultra-fast Raman Imaging becomes possible
by dedicated line illumination and highest spatial resolution.

High Performance Raman Imaging

Nanophoton developed a dedicated technology providing highest speed by using a unique laser line illumination system. A special illumination and detection system gets 400 spectra with only one laser shot. By moving the laser line across your sample without moving the sample, several hundred thousands of data are collected within a few minutes to complete a whole Raman image of your area of interest. The Nanophoton technology provides highest speed without limitation in resolution and accuracy.


Nanophoton developed a dedicated confocal optical system providing highest spatial and spectral resolution in 3 dimensions. The highest spatial resolution enhances the sensitivity to detect particles of less than 100 nm. Highest spectral resolution combined with the necessary positioning accuracy gives you tremendous data even for stress or polytype analysis.

Dedicated technology for ultra-fast Raman imaging Dedicated technology for ultra-fast Raman imaging

 

Highest spatial resolution
Highest spatial resolution

Sample
Fluorescent beads(Φ200 nm)
Excitation
532 nm
Objective
100x, 0.90 NA

Spectral resolution and peak positioning accuracy
Spectral resolution and peak positioning accuracy

Excitation
785 nm (L) | 532 nm (R)
Grating
1200 (L) | 2400 (R)

 

Raman analysis of 100 nm particle

Our highest spatial resolution enhances the sensitivity to detect tiny particles. High-quality dark-field microscopy can easily identify particles of less than 100 nm. The laser beam will then be accurately focused on it using galvanometer mirrors, producing a spectrum with a high signal-to-noise ratio that an identification can be done by a library search

 

Dark field microscopy and Raman analysis of 100 nm particle
Dark field microscopy and Raman analysis of 100 nm particle

 

Visualize stress distribution by 3D Raman Imaging

Our confocal optics allows depth profiling of transparent samples such as SiC and GaN. Here we demonstrate the cross-sectional Raman imaging of stress distribution in a SiC wafer. It easily shows that stress is reduced by the polishing process.

 

Confocal optical system
Confocal optical system

Photoluminescence (PL) imaging is widely used to observe the distribution of defects, impurities and GaN itself. 325 nm UV laser option is used to surpass the band gap and detect PL spectra of InGaN dots with different sizes and composition. A UV laser is also useful to measure Raman spectra at the outermost surface of samples because of its short penetration depth.