UV/DUV Laser Scanning Raman Microscopy RAMANtouch vioLa
Case 1: Stress analysis of 6H-SiC
Surface stress of SiC wafer was measured. Comparing the optical microscopy image with the Raman image, it can be seen that tensile stress is generated in the defective part and that compressive stress is generated between the defects. At the wavelength of 325 nm, only the outermost surface of SiC could be observed. The peak of the Raman shift of 789 cm-1 was used for observation. This peak corresponds to FTO (2/6) E 2 of 6H - SiC.
Case 2：PL emission from micro structure of InGaN
It is observed luminescence from the island structure of InGaN grown on a GaN substrate. The difference in grown methods is imaged as a change of PL emission. Imaging in a wide wavelength range from 325 nm to 500 nm can be performed with a newly designed optical system.